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1

Influence of laser annealing on defect-related luminescence of InGaN epilayers

Darius Dobrovolskas, Jūras Mickevičius, Vida Kazlauskienė, Juozas Miškinis, Edmundas Kuokštis, Gintautas Tamulaitis, Pavels Onufrijevs, Arturs Medvids, Jeng-Jie Huang, Chih-Yen Chen, Che-Hao Liao, C.C

Journal:

Journal of Luminescence

Année:

2011

Langue:

english

Fichier:

PDF, 1.04 MB

english, 2011

2

High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes

J. P. Zhang, H. M. Wang, W. H. Sun, V. Adivarahan, S. Wu, A. Chitnis, C. Q. Chen, M. Shatalov, E. Kuokstis, J. W. Yang, M. Asif Khan

Journal:

Journal of Electronic Materials

Année:

2003

Langue:

english

Fichier:

PDF, 667 KB

english, 2003

3

Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells

Kuokstis, E., Yang, J. W., Simin, G., Khan, M. Asif, Gaska, R., Shur, M. S.

Journal:

Applied Physics Letters

Année:

2002

Langue:

english

Fichier:

PDF, 269 KB

english, 2002

4

Polarization Effects and UV Emission in Highly Excited Quaternary AlInGaN Quantum Wells

E. Kuokstis, Jianping Zhang, J.W. Yang, G. Simin, M. Asif Khan, R. Gaska, M. Shur

Journal:

physica status solidi (b)

Année:

2001

Langue:

english

Fichier:

PDF, 100 KB

english, 2001

5

Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers for Ultraviolet Light Emitters

J.P. Zhang, E. Kuokstis, Q. Fareed, H.M. Wang, J.W. Yang, G. Simin, M. Asif Khan, G. Tamulaitis, G. Kurilcik, S. Jursenas, A. Zukauskas, R. Gaska, M. Shur

Journal:

physica status solidi (a)

Année:

2001

Langue:

english

Fichier:

PDF, 98 KB

english, 2001

6

Electron-hole drops in A2B6 compounds with blende type structure

E. Kuokštis, R. Baltramiejùnas, J. Vaitkus

Journal:

Journal of Luminescence

Année:

1982

Langue:

english

Fichier:

PDF, 287 KB

english, 1982

7

Dynamics of stimulated emission and optical gain in highly excited superlattices

E. Kuokštis, E. Gerazimas, R. Baltramiejünas, H. Weinert

Journal:

Superlattices and Microstructures

Année:

1991

Langue:

english

Fichier:

PDF, 286 KB

english, 1991

8

Indium-incorporation-induced transformation of optical, photoluminescence and lasing properties of InGaN epilayers

Mee-Yi Ryu, E Kuokstis, C.Q Chen, J.W Yang, G Simin, M Asif Khan, G.G Sim, P.W Yu

Journal:

Solid State Communications

Année:

2003

Langue:

english

Fichier:

PDF, 166 KB

english, 2003

9

Investigation of the effect of indium mole fractions on recombination processes in AlInGaN layers grown by pulsed MOCVD

Jae Ho Song, Jhang W. Lee, P.W. Yu, Mee-Yi Ryu, J. Zhang, E. Kuokstis, J.W. Yang, M. Asif Khan

Journal:

Solid State Communications

Année:

2003

Langue:

english

Fichier:

PDF, 142 KB

english, 2003

10

Strong ultraviolet emission from non-polar AlGaN/GaN quantum wells grown over r-plane sapphire substrates

W. H. Sun, E. Kuokstis, M. Gaevski, J. P. Zhang, C. Q. Chen, H. M. Wang, J. W. Yang, G. Simin, M. Asif Khan, R. Gaska, M. S. Shur

Journal:

physica status solidi (a)

Année:

2003

Langue:

english

Fichier:

PDF, 91 KB

english, 2003

11

Carrier diffusion and recombination in highly excited InGaN/GaN heterostructures

K. Jarašiūnas, R. Aleksiejūnas, T. Malinauskas, M. Sūdžius, S. Miasojedovas, S. Juršėnas, A. Žukauskas, R. Gaska, J. Zhang, M. S. Shur, J. W. Yang, E. Kuokštis, M. A. Khan

Journal:

physica status solidi (a)

Année:

2005

Langue:

english

Fichier:

PDF, 489 KB

english, 2005

12

Photoluminescence dynamics of AlGaN quantum wells with built-in electric fields and localized states

J. Mickevičius, E. Kuokštis, V. Liuolia, G. Tamulaitis, M. S. Shur, J. Yang, R. Gaska

Journal:

physica status solidi (a)

Année:

2010

Langue:

english

Fichier:

PDF, 188 KB

english, 2010

13

Self-heating of dense exciton Gas in CdTe single crystals

R. Baltramiejūnas, E. Kuokštis, A. Žukauskas

Journal:

physica status solidi (b)

Année:

1983

Langue:

english

Fichier:

PDF, 362 KB

english, 1983

14

Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four-wave mixing technique

R. Aleksiejūnas, M. Sūdžius, V. Gudelis, T. Malinauskas, K. Jarašiūnas, Q. Fareed, R. Gaska, M. S. Shur, J. Zhang, J. Yang, E. Kuokštis, M. A. Khan

Journal:

physica status solidi (c)

Année:

2003

Langue:

english

Fichier:

PDF, 200 KB

english, 2003

15

Luminescence of highly excited nonpolar a-plane GaN epilayers

S. Juršėnas, E. Kuokštis, S. Miasojedovas, G. Kurilčik, A. Žukauskas, C. Q. Chen, J. W. Yang, V. Adivarahan, M. Asif Khan, M. S. Shur

Journal:

physica status solidi (c)

Année:

2005

Langue:

english

Fichier:

PDF, 157 KB

english, 2005

16

Influence of stacking faults on the properties of GaN-based UV light-emitting diodes grown on non-polar substrates

C. Q. Chen, V. Adivarahan, M. Shatalov, M. E. Gaevski, E. Kuokstis, J. W. Yang, H. P. Maruska, Z. Gong, M. Asif Khan, R. Liu, A. Bell, F. A. Ponce

Journal:

physica status solidi (c)

Année:

2005

Langue:

english

Fichier:

PDF, 235 KB

english, 2005

17

Growth of high resistance thick GaN templates by HVPE

R. B. Jain, R. S. Q. Fareed, J. Zhang, R. Gaska, E. Kuokstis, J. Yang, H. P. Maruska, M. A. Khan, J. Mickevicius, G. Tamulaitis, M. S. Shur

Journal:

physica status solidi (c)

Année:

2005

Langue:

english

Fichier:

PDF, 213 KB

english, 2005

18

Growth of AlN films and their characterization

Rakesh B. Jain, Ying Gao, Jianping Zhang, R. S. Qhaleed Fareed, Remis Gaska, Jiawei Li, Arulchakkravarthi Arjunan, Edmundas Kuokstis, Jinwei Yang, M. Asif Khan

Journal:

physica status solidi (c)

Année:

2006

Langue:

english

Fichier:

PDF, 329 KB

english, 2006

19

Carrier dynamics in wide-band-gap AlGaN/AlGaN quantum wells

G. Tamulaitis, J. Mickevičius, E. Kuokštis, K. Liu, M. S. Shur, J. P. Zhang, R. Gaska

Journal:

physica status solidi (c)

Année:

2008

Langue:

english

Fichier:

PDF, 186 KB

english, 2008

20

Photoluminescence studies of MBE-grown ZnO and MgZnO epitaxial layers

Edmundas Kuokštis, Mindaugas Karaliūnas, Saulius Juršėnas, Saulius Miasojedovas, Tomas Serevičius, Shao-Ying Ting, Jeng-Jie Huang, Chih-Chung Yang

Journal:

physica status solidi (c)

Année:

2009

Langue:

english

Fichier:

PDF, 364 KB

english, 2009

21

Spatially-resolved photoluminescence study of high indium content InGaN LED structures

G. Tamulaitis, J. Mickevičius, D. Dobrovolskas, E. Kuokštis, M. Shur, M. Shatalov, J. Yang, R. Gaska

Journal:

physica status solidi (c)

Année:

2010

Langue:

english

Fichier:

PDF, 182 KB

english, 2010

22

Suppression of defect-related luminescence in laser-annealed InGaN epilayers

G. Tamulaitis, D. Dobrovolskas, J. Mickevičius, V. Kazlauskienė, J. Miškinis, E. Kuokštis, P. Onufrijevs, A. Medvids, J.-J. Huang, C.-Y. Chen, C.-H. Liao, C. C. Yang

Journal:

physica status solidi (c)

Année:

2012

Langue:

english

Fichier:

PDF, 281 KB

english, 2012

23

Carrier dynamics and efficiency droop in AlGaN epilayers with different Al content

Gintautas Tamulaitis, Jūras Mickevičius, Darius Dobrovolskas, Edmundas Kuokštis, Michael S. Shur, Max Shatalov, Jinwei Yang, Remis Gaska

Journal:

physica status solidi (c)

Année:

2012

Langue:

english

Fichier:

PDF, 252 KB

english, 2012

24

GaN/AlGaN multiple quantum wells on a-plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices

Sun, W. H., Yang, J. W., Chen, C. Q., Zhang, J. P., Gaevski, M. E., Kuokstis, E., Adivarahan, V., Wang, H. M., Gong, Z., Su, M., Khan, M. Asif

Journal:

Applied Physics Letters

Année:

2003

Langue:

english

Fichier:

PDF, 471 KB

english, 2003

25

Visible light-emitting diodes using a-plane GaN–InGaN multiple quantum wells over r-plane sapphire

Chitnis, Ashay, Chen, Changqing, Adivarahan, Vinod, Shatalov, Maxim, Kuokstis, Edmundas, Mandavilli, Vasavi, Yang, Jinwei, Khan, M. Asif

Journal:

Applied Physics Letters

Année:

2004

Langue:

english

Fichier:

PDF, 456 KB

english, 2004

26

GaN homoepitaxy on freestanding (11¯00) oriented GaN substrates

Chen, C. Q., Gaevski, M. E., Sun, W. H., Kuokstis, E., Zhang, J. P., Fareed, R. S. Q., Wang, H. M., Yang, J. W., Simin, G., Khan, M. A., Maruska, Herbert-Paul, Hill, David W., Chou, Mitch M. C., Chai,

Journal:

Applied Physics Letters

Année:

2002

Langue:

english

Fichier:

PDF, 505 KB

english, 2002

27

Role of alloy fluctuations in photoluminescence dynamics of AlGaN epilayers

Kuokstis, E., Sun, W. H., Shatalov, M., Yang, J. W., Asif Khan, M.

Journal:

Applied Physics Letters

Année:

2006

Langue:

english

Fichier:

PDF, 485 KB

english, 2006

28

Near-band-edge photoluminescence of wurtzite-type AlN

Kuokstis, E., Zhang, J., Fareed, Q., Yang, J. W., Simin, G., Khan, M. Asif, Gaska, R., Shur, M., Rojo, C., Schowalter, L.

Journal:

Applied Physics Letters

Année:

2002

Langue:

english

Fichier:

PDF, 352 KB

english, 2002

29

Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN

Gaska, R., Chen, C., Yang, J., Kuokstis, E., Khan, A., Tamulaitis, G., Yilmaz, I., Shur, M. S., Rojo, J. C., Schowalter, L. J.

Journal:

Applied Physics Letters

Année:

2002

Langue:

english

Fichier:

PDF, 389 KB

english, 2002

30

Radiative and nonradiative recombination rates in cubic SiC

Ščajev, Patrik, Karaliūnas, Mindaugas, Kuokštis, Edmundas, Jarašiūnas, Kęstutis

Journal:

Journal of Luminescence

Année:

2013

Langue:

english

Fichier:

PDF, 875 KB

english, 2013

31

Luminescence mechanisms in quaternary Al[sub x]In[sub y]Ga[sub 1−x−y]N materials

Ryu, Mee-Yi, Chen, C. Q., Kuokstis, E., Yang, J. W., Simin, G., Khan, M. Asif

Journal:

Applied Physics Letters

Année:

2002

Langue:

english

Fichier:

PDF, 300 KB

english, 2002

32

III–Nitride UV Devices

Asif Khan, M., Shatalov, M., Maruska, H. P., Wang, H. M., Kuokstis, E.

Journal:

Japanese Journal of Applied Physics

Année:

2005

Langue:

english

Fichier:

PDF, 421 KB

english, 2005

33

Reviews

Lane, David, Mertelsmann, Olaf, Moses, Joel C., Liber, George O., Kuokštis, Vytautas, Mišik, Matúš, Schaaf, Matthew, Soyaltin, Digdem, Berg, Auri, Sweet, Colin, Park, Ausra, Frear, Matthew, Izsák, Dán

Journal:

Europe Asia Studies

Année:

2011

Langue:

english

Fichier:

PDF, 202 KB

english, 2011

34

[IEEE International Semiconductor Device Research Symposium, 2003 - Washington, DC, USA (Dec. 10-12, 2003)] International Semiconductor Device Research Symposium, 2003 - Deep ultraviolet emission in AlGaN-based quantum wells on bulk AIN substrates

Fareed, Q., Jain, R., Gaska, R., Tamulaitis, G., Yilmaz, I., Shur, M., Kuokstis, E., Khan, A.

Année:

2003

Langue:

english

Fichier:

PDF, 95 KB

english, 2003

35

Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells

E. Kuokstis, J. Zhang, M. Ryu, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, M. S. Shur

Année:

2001

Langue:

english

Fichier:

PDF, 300 KB

english, 2001

36

Photoluminescence dynamics in highly nonhomogeneously excited GaN

Kuokstis, E., Tamulaitis, G., Liu, K., Shur, M. S., Li, J. W., Yang, J. W., Asif Khan, M.

Journal:

Applied Physics Letters

Année:

2007

Langue:

english

Fichier:

PDF, 480 KB

english, 2007

37

Pulsed atomic layer epitaxy of quaternary AlInGaN layers

Zhang, J., Kuokstis, E., Fareed, Q. , Wang, H., Yang, J. , Simin, G., Khan, M. Asif, Gaska, R., Shur, M.

Journal:

Applied Physics Letters

Année:

2001

Langue:

english

Fichier:

PDF, 396 KB

english, 2001

38

Pulsed atomic-layer epitaxy of ultrahigh-quality Al[sub x]Ga[sub 1−x]N structures for deep ultraviolet emissions below 230 nm

J. P. Zhang, M. A. Khan, W. H. Sun, H. M. Wang, C. Q. Chen, Q. Fareed, E. Kuokstis, J. W. Yang

Année:

2002

Langue:

english

Fichier:

PDF, 337 KB

english, 2002

39

Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells

M. Ryu, C. Q. Chen, E. Kuokstis, J. W. Yang, G. Simin, M. A. Khan, G. G. Sim, P. W. Yu

Année:

2002

Langue:

english

Fichier:

PDF, 301 KB

english, 2002

40

Air-bridged lateral growth of crack-free Al[sub 0.24]Ga[sub 0.76]N on highly relaxed porous GaN

Fareed, R. S. Qhalid, Adivarahan, V., Chen, C. Q., Rai, S., Kuokstis, E., Yang, J. W., Khan, M. Asif, Caissie, J., Molnar, R. J.

Journal:

Applied Physics Letters

Année:

2004

Langue:

english

Fichier:

PDF, 347 KB

english, 2004

41

Ultraviolet Light Emitting Diodes Using Non-Polar a-Plane GaN-AlGaN Multiple Quantum Wells

Chen, Changqing, Adivarahan, Vinod, Yang, Jinwei, Shatalov, Maxim, Kuokstis, Edmundas, Khan, Muhammad Asif

Journal:

Japanese Journal of Applied Physics

Année:

2003

Langue:

english

Fichier:

PDF, 122 KB

english, 2003

42

Room-temperature optically pumped laser emission from a-plane GaN with high optical gain characteristics

Kuokstis, E., Chen, C. Q., Yang, J. W., Shatalov, M., Gaevski, M. E., Adivarahan, V., Khan, M. Asif

Journal:

Applied Physics Letters

Année:

2004

Langue:

english

Fichier:

PDF, 581 KB

english, 2004

43

Exciton and carrier motion in quaternary AlInGaN

Kazlauskas, K., Tamulaitis, G., Žukauskas, A., Khan, M. A., Yang, J. W., Zhang, J., Kuokstis, E., Simin, G., Shur, M. S., Gaska, R.

Journal:

Applied Physics Letters

Année:

2003

Langue:

english

Fichier:

PDF, 242 KB

english, 2003

44

Temperature dependent double blueshift of photoluminescence peak position in MgZnO epitaxial layers

Karaliunas, Mindaugas, Kuokstis, Edmundas, Ting, Shao-Ying, Huang, Jeng-Jie, Yang, C. C.

Journal:

Journal of Applied Physics

Année:

2014

Langue:

english

Fichier:

PDF, 970 KB

english, 2014

45

Erratum: “Near-band-edge photoluminescence of wurtzite-type AlN” [Appl. Phys. Lett. 81, 2755 (2002)]

Kuokstis, E., Zhang, J., Fareed, Q., Yang, J. W., Simin, G., Khan, M. Asif, Gaska, R., Shur, M., Rojo, J. C., Schowalter, L. J.

Journal:

Applied Physics Letters

Année:

2003

Langue:

english

Fichier:

PDF, 201 KB

english, 2003

46

Photoluminescence of GaN deposited on single-crystal bulk AlN with different polarities

Tamulaitis, G., Yilmaz, I., Shur, M. S., Gaska, R., Chen, C., Yang, J., Kuokstis, E., Khan, A., Schujman, S. B., Schowalter, L. J.

Journal:

Applied Physics Letters

Année:

2003

Langue:

english

Fichier:

PDF, 238 KB

english, 2003

47

Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells

Kuokstis, E., Chen, C. Q., Gaevski, M. E., Sun, W. H., Yang, J. W., Simin, G., Asif Khan, M., Maruska, H. P., Hill, D. W., Chou, M. C., Gallagher, J. J., Chai, B.

Journal:

Applied Physics Letters

Année:

2002

Langue:

english

Fichier:

PDF, 377 KB

english, 2002

48

Internal polarization fields in GaN∕AlGaN multiple quantum wells with different crystallographic orientations

Kuokstis, E., Sun, W. H., Chen, C. Q., Yang, J. W., Khan, M. Asif

Journal:

Journal of Applied Physics

Année:

2005

Langue:

english

Fichier:

PDF, 565 KB

english, 2005

49

Cooperating Estonians and “exiting” Lithuanians: trust in times of crisis

Kuokštis, Vytautas

Journal:

Post-Soviet Affairs

Année:

2015

Langue:

english

Fichier:

PDF, 307 KB

english, 2015

50

Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes

Zhang, Jian Ping, Adivarahan, Vinod, Wang, Hong Mei, Fareed, Qhalid, Kuokstis, Edmundas, Chitnis, Ashay, Shatalov, Maxim, Yang, Jin Wei, Simin, Grigory, Khan, Muhammad Asif, Shur, Michael, Gaska, Remi

Journal:

Japanese Journal of Applied Physics

Année:

2001

Langue:

english

Fichier:

PDF, 661 KB

english, 2001